We have fabricated a 320 × 256 array of InGaAs/InP infrared phototransistors integrated with a conventional silicon readout circuit. Here, we show the experimental validation of this prediction for III–V heterojunction phototransistors. Recent theoretical predictions suggested that reducing the internal capacitance of detectors with internal gain can increase their sensitivity. This limitation can be addressed by the internal gain of the sensors, but only if fast response time and low dark current are achieved simultaneously. The sensitivity of conventional short-wave infrared cameras is limited by their readout noise level. In addition, low temperature solution-processed P(VDF-TrFE) and (C 6H 5C 2H 4NH 3) 2SnI 4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.Ultra-sensitive and fast infrared imaging has become increasingly important in applications that require high frame rates at low light levels, such as exoplanet imaging. In addition to that, the device also demonstrated a high responsivity of 14.57 A W −1 and a high detectivity of 1.74 × 10 12 Jones under the polarization “up” state with an illumination intensity of 21 μW cm −2. Under polarization “up” and “down” states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively.

We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C 6H 5C 2H 4NH 3) 2SnI 4) were utilized as a dielectric layer and a channel layer, respectively. The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications.

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